IEEE Transactions on Device and Materials Reliability
基本信息
IEEE Transactions on Device and Materials Reliability includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectations. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
CiteScore
| 学科 | 排名 | 百分位 |
|---|---|---|
EngineeringSafety, Risk, Reliability and Quality |
65 / 207 | 68% |
期刊统计
投稿信息
投稿网址:
http://mc.manuscriptcentral.com/tdmr相关文献
Electronic structures of bare and terephthalic acid adsorbed TiO2(110)-(1 × 2) reconstructed surfaces: origin and reactivity of the band gap states
Wenhua Zhang, Liming Liu, Li Wan, Lingyun Liu, Liang Cao, Faqiang Xu
DOI: 10.1039/C5CP01298H
Complexes of a naphthalimide photoacid with organic bases, and their excited-state dynamics in polar aprotic organic solvents
Tatu Kumpulainen, Bert H. Bakker, Albert M. Brouwer
DOI: 10.1039/C5CP02556G
Broadband two dimensional infrared spectroscopy of cyclic amide 2-Pyrrolidinone
DOI: 10.1039/C5CP04272K
Excited states in large molecular systems through polarizable embedding
Nanna Holmgaard List, Jógvan Magnus Haugaard Olsen, Jacob Kongsted
DOI: 10.1039/C6CP03834D
The properties of substituted 3D-aromatic neutral carboranes: the potential for σ-hole bonding
Rabindranath Lo, Jindřich Fanfrlík, Martin Lepšík
DOI: 10.1039/C5CP03617H
Optically active multi-helical erythrocyte-like Ln(OH)CO3 (Ln = La, Ce, Pr and Sm)
Jing Chen, Songmei Li, Juan Du, Bo Wang, Shiming Meng, Jianhua Liu, Mei Yu
DOI: 10.1039/C6CP02302A
The non-dominance of counterions in charge-asymmetric electrolytes: non-monotonic precedence of electrostatic screening and local inversion of the electric field by multivalent coions
Guillermo Iván Guerrero-García, Enrique González-Tovar, Manuel Quesada-Pérez, Alberto Martín-Molina
DOI: 10.1039/C6CP03483G
A multiscale mechanism of drug release from polymeric matrices: confirmation through a nonlinear theoretical model
E. S. Bacaita, M. Agop
DOI: 10.1039/C6CP02259F
Topography evolution of 500 keV Ar4+ ion beam irradiated InP(100) surfaces – formation of self-organized In-rich nano-dots and scaling laws
Indra Sulania, Dinesh C. Agarwal, Manish Kumar, Sunil Kumar, Pravin Kumar
DOI: 10.1039/C6CP03409H
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