The role of an unintentional carbon dopant in resolving the controversial conductivity aspects in BiFeO3

文献信息

发布日期 2020-04-27
DOI 10.1039/C9CP06614D
影响因子 3.676
作者

Shaan Ameer, Kajal Jindal, Monika Tomar, Pradip K. Jha, Vinay Gupta


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摘要

Light elements like carbon may enter unintentionally into a material during material processing owing to their ubiquitous nature, and may significantly influence its observed electronic and magnetic properties. In the present work, the energetics and kinetics of carbon impurity related defects in BiFeO3 (BFO) are studied using first principles calculations in order to gain insight into the ongoing controversial aspects of conductivity of BFO. The results suggest that oxygen deficient conditions provide a favorable chemical environment for incorporation of carbon in BFO. Calculations based on the formation energy predict that carbon can spontaneously occupy interstitials, O, and Fe sites in BFO (where it is found to introduce impurity induced shallow acceptor type states at an energy of 0.05 eV above the valence band maximum). Carbon occupying cationic sites (CBi and CFe) tends to ionize their vacancies (VBi and VFe), resulting in the formation of a CO3 cluster, whereas it induces localized electron traps with energy levels composed of impurity states near the center of the band gap (0.9 eV above the valence band maximum) when occupying interstitial sites in BFO. An understanding of the migration of C impurity in BFO is developed, which suggests the favorable incorporation of carbon impurity via a vacancy mechanism. In order to confirm the theoretical results, experimental studies are carried out where BFO and carbon doped BFO (BCFO) thin films are grown by the pulsed laser deposition technique. Polycrystalline pure phase (R3c) thin films of BFO and BCFO are obtained. The presence of defect states in the deposited thin films is optically analyzed by the photoluminescence (PL) technique. In order to highlight the critical role of carbon in modifying the electrical conductivity of BFO, a BCFO/BFO/ITO based p–i–n heterojunction is prepared. The electrical characteristics depict remarkable rectifying characteristics, thus suggesting the p-type nature of carbon dopant in otherwise intrinsic BFO.

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来源期刊

Physical Chemistry Chemical Physics

Physical Chemistry Chemical Physics
CiteScore: 5.5
自引率: 10.3%
年发文量: 3036

Physical Chemistry Chemical Physics (PCCP) is an international journal co-owned by 19 physical chemistry and physics societies from around the world. This journal publishes original, cutting-edge research in physical chemistry, chemical physics and biophysical chemistry. To be suitable for publication in PCCP, articles must include significant innovation and/or insight into physical chemistry; this is the most important criterion that reviewers and Editors will judge against when evaluating submissions. The journal has a broad scope and welcomes contributions spanning experiment, theory, computation and data science. Topical coverage includes spectroscopy, dynamics, kinetics, statistical mechanics, thermodynamics, electrochemistry, catalysis, surface science, quantum mechanics, quantum computing and machine learning. Interdisciplinary research areas such as polymers and soft matter, materials, nanoscience, energy, surfaces/interfaces, and biophysical chemistry are welcomed if they demonstrate significant innovation and/or insight into physical chemistry. Joined experimental/theoretical studies are particularly appreciated when complementary and based on up-to-date approaches.

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