Hierarchically structured sub-bands in chalcopyrite thin-film solar cell devices

Framing effective mitigation steps to resolve the energy crisis directs to the research gap of existing solar cell technologies. The study utilizes the inherent physiochemical properties of vanadium-incorporated copper gallium sulfide telluride (CuGa1−xVx(S,Te)2) thin films deposited via a chemical spray pyrolysis route and evokes how the art of intermediate band structuring favours the solar cell efficiency. The research laid a strong basement with SCAPS theoretical modelling followed by thorough experimental validation and precise analysis. I–V curves showed the photoresponsivity (R) and Ohmic nature of the deposited thin films with a maximum photoresponsivity of 0.19 A W−1, observed for the V – 0.1-incorporated CGST film. The theoretical simulation of the fabricated solar cell was conducted using the SCAPS – 1D software, and the obtained efficiency displayed an increasing trend from 4.82% to 11.01%. This increase in efficiency can be attributed to the decrease in bandgap from 2.63 eV to 1.92 eV, as evidenced by UV-Vis spectroscopy. These findings suggest that V – 0.1-incorporated CGST is a promising candidate for use as a thin-film absorber layer in solar photovoltaic technology.