SPIN

基本信息

期刊简写: SPIN
影响因子: 1.3
ISSN: 2010-3247
研究领域: PHYSICAL
h-index: 1
自引率: 15.4%
年发文量: 58

SCI收录来源: Science Citation Index Expanded
期刊官网: https://www.worldscientific.com/worldscinet/spin
期刊介绍:

Spin electronics is a rapidly emerging field which is based on taking advantage of the unique properties of the spin of the electron, the nucleus and other fundamental particles, as well as that of the photon. Spin electronics has special importance as conventional electronics reaches its physical limitations. Novel sensing, memory and logic devices, which rely on generating, manipulating and detecting the electron's spin, as well as using currents of spin-polarized electrons to manipulate magnetization in the form of magnetic nanoelements and magnetic domain walls, have emerged in recent years. Spin electronic devices in the form of highly sensitive read sensors for magnetic recording have been a key component of high capacity magnetic disk drives for more than a decade: they enabled a vast increase in the storage capacity of disk drives by several orders of magnitude and are key to today's information age. Solid state memory devices such as Magnetic Random Access Memory (MRAM) have recently entered the market. Other exciting possibilities relate to very dense and high performance memory-storage devices such as Racetrack Memory, as well as low power magnetic logic, and applications of spintronic sensing devices such as diagnostic biomagnetic lab-on-a-chip devices. Many of these applications require the integration of magnetic and semiconducting materials and a fundamental understanding of both magnetic and semiconductor physics and technology: this is especially important if spin electronics is to become the electronics of the future. Spin electronics encompasses a multidisciplinary research effort involving magnetism, semiconductor electronics, materials science, chemistry and biology. SPIN aims to provide a forum for the presentation of research and review articles of interest to all researchers in the field. The scope of the journal includes (but is not necessarily limited to) the following topics: Spin related quantum computing Quantum computing hardware: superconductivity, optical quantum, ion trap, semiconductor, topological quantum computing, etc. Quantum computing applications: quantum chemistry, quantum finance, quantum artificial intelligence, etc. Quantum simulation theory and experiment Materials Metals Heusler compounds Complex oxides: antiferromagnetic, ferromagnetic Dilute magnetic semiconductors Dilute magnetic oxides High performance and emerging magnetic materials Semiconductor electronics Nanodevices Fabrication Characterization Spin injection Spin transport Spin transfer torque Spin torque oscillators Electrical control of magnetic properties Organic spintronics Optical phenomena and optoelectronic spin manipulation Applications and devices Novel memories and logic devices Lab-on-a-chip Others Fundamental and interdisciplinary studies Spin in low dimensional system Spin in medical sciences Spin in other fields Computational materials discovery

CiteScore

CiteScore
2.1
SJR
0.233
SNIP
0.48
学科 排名 百分位
EngineeringElectrical and Electronic Engineering
486 / 797 39%

期刊统计

期/年
审稿周期
论文处理费

投稿信息

投稿网址:

https://www.editorialmanager.com/SPIN

相关文献

Kinetic analysis of supported Ni-catalyzed CO2/CH4 reactions using photoacoustic spectroscopy

Ji-Woong Kim, Jae-Au Ha, Hun Jung, Byung-II Ahn, Sung-Han Lee, Joong-Gill Choi

2007-09-25 Paper

DOI: 10.1039/B709102H

Inside front cover

Front/Back Matter

DOI: 10.1039/B715654P

Barium diffusion in mixed cation glasses

M. Grofmeier, F. V. Natrup, H. Bracht

2007-09-21 Paper

DOI: 10.1039/B709868E

Localized orbital theory and ammonia triborane

Joseph E. Subotnik, Alex Sodt, Martin Head-Gordon

2007-08-29 Paper

DOI: 10.1039/B709171K

EPR and optical studies of erbium-doped β-PbF2 single-crystals and nanocrystals in transparent glass–ceramics

Géraldine Dantelle, Michel Mortier, Daniel Vivien

2007-08-30 Paper

DOI: 10.1039/B706735F

On the position of the potential wall in DFT temporary anion calculations

Nick Sablon, Frank De Proft, Paul Geerlings, David J. Tozer

2007-09-24 Paper

DOI: 10.1039/B711428A

Front cover

Cover

DOI: 10.1039/B715298C

Inside front cover

Front/Back Matter

DOI: 10.1039/B714846C

您可能还喜欢

化合物问答

4-[4-三氟甲基苯基]恶唑(CAS号:1126636-40-5)通常如何合成?

4-[4-三氟甲基苯基]恶唑通常通过将4-三氟甲基苯酚与异硫氰酸苯酯在有机溶剂中进行酯化反应合成。该反应可在无水条件下,使用适当的催化剂,如四丁基氢氧化铵,以提...

1126636-40-54-(4-(Trifluoromethy...
化合物问答

氢溴酸西酞普兰(CAS号:59729-32-7)的主要用途是什么?

氢溴酸西酞普兰主要用于治疗抑郁症,通过调节大脑中的神经递质平衡来改善情绪。

59729-32-71-[3-(Dimethylamino)...
化合物问答

RockPhos Pd G3(CAS号:2009020-38-4)通常如何合成?

RockPhos Pd G3 通常通过钯催化偶联反应合成,使用配体 (2'-Amino-2-biphenylyl)(methanesulfonato-kappa...

2009020-38-4(2'-Amino-2-biphenyl...
化合物问答

1-哌啶甲酰胺(CAS号:2158-03-4)的市场或研究趋势如何?

1-哌啶甲酰胺作为有机合成中的重要中间体,其市场需求主要受医药、农药、染料等行业推动。近年来,随着新药开发和绿色化学的发展,该化合物的研究趋势集中在开发更高效、...

2158-03-41-Piperidinecarboxam...
化合物问答

2-(二苯基膦基)乙胺(CAS号:4848-43-5)适用哪些法规指南?

2-(二苯基膦基)乙胺适用于多种法规指南,包括但不限于《全球化学品统一分类和标签制度》(GHS),欧盟《化学品注册、评估、授权和限制》法规(REACH),以及美...

4848-43-52-(Diphenylphosphino...
化合物问答

如何储存间苯二甲酸二烯丙酯(CAS号:1087-21-4)?

间苯二甲酸二烯丙酯应储存在阴凉、干燥、通风良好的地方,远离火源和热源。储存容器应密封,避免光照和高温。储存温度应控制在25℃以下,相对湿度应低于80%。避免与其...

1087-21-4Diallyl isophthalate
化合物问答

什么是间甲苯异硫代异氰酸酯(CAS号:621-30-7)?

间甲苯异硫代异氰酸酯是一种有机化合物,分子式为C7H7NO2S,具有刺激性气味。它是一种重要的有机合成中间体,在合成其他化合物时广泛应用。

621-30-71-Isothiocyanato-3-m...
化合物问答

在合成中是否有N-Boc-D-苯丙氨醇(CAS号:106454-69-7)的替代品?

在合成中,可以考虑使用N-Cbz-D-苯丙氨醇或N-Fmoc-D-苯丙氨醇作为替代品。这些化合物同样具有保护氨基的功能,且在合成过程中表现出良好的反应性能。

106454-69-72-Methyl-2-propanyl ...
化合物问答

3-羟甲基-2-氧异丙基吡啶(CAS号:954240-50-7)的主要用途是什么?

3-羟甲基-2-氧异丙基吡啶主要用于有机合成领域,可以作为合成其他药物、农药或精细化学品的中间体。此外,它还可能在实验室研究中作为特定反应的前体或溶剂。

954240-50-7(2-Isopropoxy-3-pyri...
化合物问答

6-氨基-9-甲基嘌呤(CAS号:700-00-5)应用于哪些行业?

6-氨基-9-甲基嘌呤目前主要应用于医药行业,作为某些药物的中间体。此外,它还可能用于聚合物、传感器和半导体的某些领域,作为功能性单体或掺杂剂。

700-00-59-Methyl-9H-purin-6-...
免责声明
本页面提供的学术期刊信息仅供参考和研究使用。我们与任何期刊出版商均无关联,也不处理投稿事宜。如有投稿相关咨询,请直接联系相关期刊出版商。
如发现页面信息有误,请发送邮件至 support@chemtradehub.com 联系我们。我们将及时核实并处理您的问题。