Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism
文献信息
The polarity of GaN epitaxial films grown on LiGaO2(001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO2(001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO2(001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO2(001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO2(001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.
期刊推荐

Planta Medica

Organic Preparations and Procedures International

Proceedings of the National Academy of Sciences of the United States of America

Journal of Medicinal Chemistry

Journal of Organometallic Chemistry

Nature

Russian Chemical Reviews

Pharmacological Reviews

European Journal of Wood and Wood Products

Journal of Physics and Chemistry of Solids
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